q?v~zy??q?v?_rb]r?qcabeq HFP18N50U bv dss = 500 v r ds(on) typ = 0.22
i d =18a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 58 nc (typ.) ? extended safe operating area ? lower r ds(on) : 0.22
7 \ s # 9 gs =10v ? 100% avalanche tested features absolute maximum ratings t c =25 e unless otherwise specified HFP18N50U 500v n-channel mosfet symbol parameter value units v dss drain-source voltage 500 v i d drain current ? continuous (t c = 25 e ) 18 a drain current ? continuous (t c = 100 e ) 11.4 a i dm drain current ? pulsed (note 1) 72 a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 950 mj i ar avalanche current (note 1) 18 a e ar repetitive avalanche energy (note 1) 23.6 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 236 w 1.89 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e 1.gate 2. drain 3. source 2 1 3 to-220 thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 0.53 e /w r cs case-to-sink 0.5 -- r ja junction-to-ambient -- 62.5 apr 2014
q?v~zy??q?v?_rb]r?qcabeq HFP18N50U notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=5.3mh, i as =18a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ ,di/dt ? $ v , v dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |